We propose a steep-slope MoS 2 -nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high I_ON /I_OFF ratios, compatible with electronic applications, albeit biased at the ultra-low voltages of around 0.1 V.
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect / Logoteta, Demetrio; Pala, Marco G.; Choukroun, Jean; Dollfus, Philippe; Iannaccone, Giuseppe. - In: IEEE ELECTRON DEVICE LETTERS. - ISSN 0741-3106. - 40:9(2019), pp. 1550-1553. [10.1109/LED.2019.2928131]
A steep-slope MoS2-nanoribbon MOSFET based on an intrinsic cold-contact effect
Logoteta, Demetrio;
2019
Abstract
We propose a steep-slope MoS 2 -nanoribbon field-effect transistor that exploits a narrow-energy conduction band to intrinsically filter out the thermionic tail of the electron energy distribution. We study the device operation principle and the performance dependence on the design parameters through atomistic self-consistent quantum simulations. Our results indicate that the device can provide high I_ON /I_OFF ratios, compatible with electronic applications, albeit biased at the ultra-low voltages of around 0.1 V.| File | Dimensione | Formato | |
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